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1200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP000524466

1200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP000524466

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    1200V IGBT Modules

    ,

    900A IGBT Modules

    ,

    FZ900R12KE4HOSA1

  • Infineon
    FZ900R12KE4HOSA1
  • Configuration
    Single
  • Collector-emitter Maximum Voltage VCEO
    1.2 KV
  • Collector-emitter Saturation Voltage
    1.75 V
  • Continuous Collector Current At 25C
    900 A
  • Gate-emitter Leakage Current
    400 NA
  • Pd-power Dissipation
    4300 W
  • Minimum Working Temperature
    -40℃
  • Maximum Working Temperature
    +150℃
  • Packaging
    10 PCS
  • Place of Origin
    Germany
  • Brand Name
    Infineon
  • Model Number
    FZ900R12KE4HOSA1
  • Minimum Order Quantity
    1PCS
  • Price
    Bargain
  • Packaging Details
    Tray
  • Delivery Time
    48hours
  • Payment Terms
    L/C, T/T
  • Supply Ability
    500 PCS+48hours

1200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP000524466

 

FZ900R12KE4HOSA1   SP000524466   Infineon   IGBT module 1200V 900A 

FZ900R12KE4

 

Manufacturer: Infineon
Product Type: IGBT Modules
Configuration: Single
Collector-emitter maximum voltage VCEO: 1.2 kV
Collector-emitter saturation voltage: 1.75 V
Continuous collector current at 25 C: 900 A
Gate-emitter leakage current: 400 nA
Pd-power dissipation: 4300 W
Minimum working temperature: - 40 C
Maximum working temperature: + 150 C
Package: Tray
Gate/emitter maximum voltage: 20 V
Mounting Style: Chassis Mount
Product Type: IGBT Modules
Series: Trenchstop IGBT4 - E4
Packing Quantity: 10 PCS
Subcategory: IGBTs
Technology: Si

 

 

1200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP000524466 01200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP000524466 1