62MM Dual IGBT Power Module Medium Power FF200R17KE4HOSA1 SP000713374

FF200R17KE4HOSA1   SP000713374    Infineon     IGBT MODULE MEDIUM POWER 62MM

FF200R17KE4

Manufacturer: Infineon
Product Type: IGBT Modules
Configuration: Dual
Collector-emitter maximum voltage VCEO: 1.7 kV
Collector-emitter saturation voltage: 2.3 V
Continuous collector current at 25 C: 310 A
Gate-emitter leakage current: 100 nA
Pd-power dissipation: 1250 W
Package / Box: Module
Minimum working temperature: - 40 C
Maximum working temperature: + 150 C
Package: Tray
Gate/emitter maximum voltage: 20 V
Mounting Style: Chassis Mount
Series: FFXR17K4H
Packing Quantity: 10 PCS
Subcategory: IGBTs
Technology: Trench/Field Stop