STGWA20H65DFB2 ST Transistor 20 A High Speed HB2 Series IGBT TO-247

Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector-Emitter Maximum Voltage VCEO: 650 V
Collector-Emitter Saturation Voltage: 1.65 V
Gate/Emitter Maximum Voltage: - 20 V, 20 V
Continuous Collector Current at 25 C: 40 A
Pd-Power Dissipation: 147 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Package: Tube
Brand: STMicroelectronics
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Package Quantity: 600 PCS
Subcategory: IGBTs
Unit Weight: 6.100 g